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Copyright (c)2006 Eudyna Devices Inc. All right reserved.

GaN HEMTs (High Electron Mobility Transistors)

Features

  • 100W in 0.2cc (500W/cc), 180W in 1.2cc (150W/cc)
  • High Channel Temperature (Tch): Up to 250°C
  • Higher Impedance: ~50Ω (Easy to Match)
  • High Operating Voltage: 50V
  • High Breakdown Voltage: 350V
  • High Power: Up to 180W
  • High Efficiency: 60% @Psat
  • High Efficiency: 35% @WCDMA Pout (Ave) see Table I
  • High Gain: 16dB @2.1GHz
  • Excellent suitability with Digital Pre-Distortion System
  • EGNB010MK
  • EGN21B180IV

Naming Rules

For General purpose

Part Number Frequency
(GHz)		 P3dB
Typ.
(dBm)		 GL
Typ.
(dB)		 η@P3dB
Typ.
(%)		 lDS(DC)
(mA)		 Rth
Typ.
(°C/W)		 Outline/
Package
Code
EGNB090MK* 0.9 51.0 18.0 65 500 1.2 MK
EGNB070MK* 0.9 49.5 18.0 65 400 1.5
EGNB045MK* 2.2 47.5 13.0 60 250 1.4
EGNB030MK* 2.7 46.5 13.0 60 200 2.0
EGNB010MK* 3.5 41.0 13.0 60 100 4.5

*: Under Development

For WCDMA BTS application (Table I)

Part Number Frequency
(GHz)		 P3dB
Typ.
(dBm)		 Pout (Ave)
Typ.
(dBm)		 GL
Typ.
(dB)		 η@Pout (Ave)
Typ.
(%)		 lM3
Typ.
(dBc)		 IDS(DC)
(mA)		 Rth
Typ.
(°C/W)		 Outline/
Package
Code
EGN18B180IV 1.805–1.880 53.0 45.0 16 32 -32 1000 0.65 IV
EGN21B180IV 2.11–2.17 53.0 45.0 16 32 -32 1000 0.65
EGN21B140IV 2.11–2.17 52.0 44.0 16 32 -32 750 0.85
EGN21B090IV 2.11–2.17 50.0 42.0 16 33 -32 500 1.2
Part Number Frequency
(GHz)		 P3dB
Typ.
(dBm)		 GL
Typ.
(dB)		 η@P3dB
Typ.
(%)		 lDS(DC)
(mA)		 Rth
Typ.
(°C/W) 		Outline/
Package
Code
EGN18B030MK 1.8 46.5 17.0 60 200 2.0 MK
EGN21B030MK 2.1 46.5 16.5 55 200 2.0

For WiMAX BTS application

Part Number Frequency
(GHz)		 P3dB
Typ.
(dBm)		 GL
Typ.
(dB)		 η@P3dB
Typ.
(%)		 lDS(DC)
(mA)		 Rth
Typ.
(°C/W) 		Outline/
Package
Code
EGN26A180IV 2.5–2.7 53.0 14.0 55 1000 0.65 IV
EGN26A090IV 2.5–2.7 50.0 14.0 55 500 1.2
EGN26A030MK 2.5–2.7 46.5 15.0 60 200 2.5 MK