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Eudyna Foundry Service is providing a wide lineup of state-ofthe-art devices corresponding to various customer demands.
Features
- State-of-the-art Devices: InP HBT, P-HEMT, GaAs MESFET
- Wide Lineup: High Power, Low Noise, Analog/Digital ICs
- High Reliability and High Uniformity
Wafer Process Technology
- Device Technology
- InP HBT: fmax = 200GHz
- E-mode power P-HEMT: BVgdo = 15V
- Low noise P-HEMT: NF = 0.4dB @12GHz
- D/E mode I.I. MESFET: ft = 90GHz
- Wiring Process Technology
- Air bridge
- Polyimide inter-layer film
- Backside Process Technology
- Dry etching via hole
- Thin wafer thickness (28µm)
- Ultra low thermal resistance
For Microwave Applications
For Fiber Optic Applications
Wafer Process Lineup
| Process | ESH-1 | EDH-1 | EDH-2 |
|---|---|---|---|
| Device | lnP/lnGaAs SHBT | lnP/lnGaAs DHBT | |
| Emitter Size (µm²) | 1.1×5.6 | 1.0×5.6 | |
| Current Gain (@1mA/µm²) | 45 | 50 | 45 |
| Ft (GHz) | 130 | 120 | 150 |
| Fmax (GHz) | 170 | 160 | 200 |
| BVceo (V) | 3 | 10 | 8 |
| Resistor (Ω/sq.) | TFR 50 or 125 | ||
| Capacitor (fF/µm²) | MIM: 0.16 & 0.33 | ||
| Wiring Metal | 3 Layers | ||
| lnsulator | SiON | ||
| Air-Bridge | Support | ||
| Die Thickness (µm) | 600/300/150, 100 for Via | ||
| Chip Separation | Dicing | ||
| Substrate Via | Support | ||
| Substrate | 3" or 4" lnP | 3" lnP | |
| Application/Features | High Uniformity, high reproducibility, and excellent reliability | ||
| Phase | Production | ||
| Process | H7P | H7 | H8 | H9 |
|---|---|---|---|---|
| Device | P-HEMT, E-Mode | P-HEMT, D-Mode | ||
| Channel | Epitaxial | |||
| Gate Length (µm) | 0.4 | 0.25 | 0.15 EB Lithography | |
| lds (mA/mm) | 150 @Vgs = 0.6V | 130 | 180 | 340 |
| Vth (V) | 0.08 | -0.65 | -0.57 | -0.95 |
| Gm (mS/mm) | 450 | 310 | 395 | 500 |
| BVgdo/BVgso (V) | -15/-15 | -9.5/-9.5 | -9/-8 | |
| Ft (GHz) | 33 | 49 | 88 | 84 |
| Resistor (Ω/sq.) | Epitaxial/recess 125/0.63k | Epitaxial 110 | Epitaxial 120 | Epitaxial 110 |
| Capacitor (fF/µm²) | MIM: 0.42 | MIM: 0.3 | ||
| Wiring Metal (local+global) | 2 Layers (1+1) | |||
| lnsulator | Polyimide | Air Bridge | ||
| Die Thickness (µm) | 28 | 75 | 28 | |
| Chip Separation | Etching | |||
| Substrate Via | Support | |||
| Substrate | 4" GaAs | |||
| Application/Features | Power MMIC, High Power Positive Bias, Low Price |
Power MMIC, High Frequency, High Power |
mm-wave, MMIC High Frequency, Low Noise |
Analog/Digital, SSl High Frequency, High Gain |
| Phase | Production | |||
| Process | SRD-800/500DD | SRD-501ED | SRD-150ED | SRD-150EDa | SRD-303ED | M3 |
|---|---|---|---|---|---|---|
| Device | MESFET, D-Mode | MESFET, D/E-Mode | ||||
| Channel | I.I. | |||||
| Gate Length (µm) | 0.8/0.5 | E: 0.5/D: 0.8 | 0.15/Optical | E: 0.3/D: 0.8 | 0.6 or 1.2 | |
| lds (mA/mm) | 185@Vgs = 0.6V 45@Vgs = 0V |
95@Vgs = 0.6V | E: 120@Vgs = 0.6V D: 140@Vgs = 0V |
E: 100@Vgs = 0 .6V D: 120@Vgs = 0V |
E: 125@Vgs = 0.6V D: 45@Vgs = 0V |
135: 0.6D 120: 1.2D |
| Vth (V) | -0.4 -1 |
E: 0.05 D: -0.4 |
E: 0 D: -0.4 |
E: 0.05 D: -0.45 |
-1.4/+0.1: 0.6D/E -1.3/+0.2: 1.2D/E |
|
| Gm (mS/mm) | 270@Vgs = 0.6V 190@Vgs = 0V |
320 | E: 360@Vgs = 0.6V D: 360@Vgs = 0V |
E: 340@Vgs = 0.6V D: 340@Vgs = 0V |
E: 360@Vgs = 0.6V D: 200@Vgs = 0V |
130/125 0.6/1.2D |
| BVgdo/BVgso (V) | -8/-8 | -10/-10 | -12/-10 | E: -6.5/-6.5 D: -5.5/-5.5 |
-15/-15 | |
| Ft (GHz) | 26@0.5µm | 30 for E | 90 | 75 | 50 for E | 25/12.4: 0.6/1.2D |
| Resistor (Ω/sq.) | I.I. 500 |
I.I. 700 |
I.I. 500 |
I.I. n+/I.I. n-/metal 365/1.26k/0.39 |
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| Capacitor (fF/µm²) | MIM: 0.1 | MIM: 0.42 | ||||
| Wiring Metal (local+global) | 2 Layers | 2 or 3 Layers | 2 Layers | 2 Layers (0+2) | ||
| lnsulator | SiON | Polyimide | ||||
| Die Thickness (µm) | 290 | lnitial-15μm | 290 | 250 | ||
| Chip Separation | Dicing | |||||
| Substrate Via | - | |||||
| Substrate | 4" GaAs | |||||
| Application/Features | High Uniformity, δVth<20mV Self-aligned LDD |
δVth<50mV Self-aligned LDD |
δVth<50mV, Asymmetric Self-aligned LDD |
High Uniformity, δVth<20mV Self-aligned LDD |
General MMIC D/E-mode, Low Price |
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| Phase | ES | Production | ||||